At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

The Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sink current rating of 6.8A. These ...

Nexperia is now offering a portfolio of 16 new low forward voltage (VF) optimised planar Schottky diodes in CFP2-HP packaging ...

Stefan Detterbeck, Director of Sales & Marketing, mechatronic systemtechnik, discusses the company’s recent attendance at ...

SMA Solar Technology AG, a global specialist in photovoltaic and storage system technology, has adopted Semikron Danfoss’ ...

Rohm has developed new 4-in-1 and 6-in-1 SiC muolded modules in the HSDIP20 package optimised for PFC and LLC converters in ...

NCT has been working on commercialisation of β-Ga O MOSFETs since 2019. This time, the world’s highest PFOM for β-Ga O ...

MacDermid Alpha Electronic Solutions, a US maker of electronic assembly materials, will introduce its latest bond pad ...

Queensland University of Technology (QUT) researchers have identified a new material which could be used as a flexible ...

Taiwan Semiconductor has introduced two new series of high-voltage rectifiers manufactured to AEC-Q101 standards and offered ...

Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...

Littelfuse, has released the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel MOSFETs or IGBTs in a half-bridge configuration. The IXD2012NTR is optimised ...