Nanowerk

Rotary mechanism combines mechanical memory with logic gates in a single device

A hybrid computer uses rotating mechanical beams for memory and electrical contacts for logic, performing reprogrammable computation through physical motion in environments where conventional ...
Hosted on MSN

Intel and SK hynix close NAND business deal: Intel gets $1.9 billion, SK hynix gets IP and employees

Intel and SK hynix this week finalized their nearly $8.85 billion transaction of Intel's NAND flash memory operations, completing a two-part process that began in 2020. On Thursday, Intel received a ...
IEEE

Design of Area-Efficient Memristor-Based XOR and XNOR Gates

Abstract: This paper presents the novel area-efficient and optimized hybrid XOR and XNOR gates designed using four MOSFETs (two NMOS and two PMOS transistors) and ...
IEEE

Depth Dependence of Neutron-Induced Errors in 3-D NAND Floating Gate Cells

Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous ...
Semiconductor Engineering

Better Contact Resistance in Top-Gate CNFETs through Self-Aligned MoOx Nanoparticle Contact Doping (NYCU et al.)

A new technical paper titled “Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx ...